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HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC442LC3B is an ideal gain block or driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * LO Driver for HMC Mixers * Military EW & ECM
Features
Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5.0 V 50 Ohm Matched Input/Output RoHS Compliant 3 x 3 mm SMT package
Functional Diagram
General Description
The HMC442LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless "Pb free" RoHS compliant SMT package. Operating between 17.5 and 25.5 GHz, the amplifier provides 13 dB of gain, +23 dBm of saturated power and 26% PAE from a +5.0 V supply voltage. This 50 Ohm matched amplifier does not require any external components, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC442LC3B allows the use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25 C, Vdd = +5V, Idd = 84 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 18 10 Min. Typ. 17.5 - 21.0 13 0.02 10 9 21 23 27 8 84 19 0.03 10 Max. Min. Typ. 21.0 - 24.0 13 0.02 10 9 22 23.5 26 8 84 19 0.03 8 Max. Min. Typ. 24.0 - 25.5 11 0.02 5 12 22 23 26 9 84 0.03 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA
*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
Broadband Gain & Return Loss
15 10 RESPONSE (dB) 5
Gain vs. Temperature
20 18 16 14 GAIN (dB)
5
AMPLIFIERS - SMT
5 - 225
0 -5 -10 -15 -20
S21 S11 S22
12 10 8 6 4 2 0
+25C +85C -40C
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 FREQUENCY (GHz)
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz)
Output Return Loss vs. Temperature
0 -2 RETURN LOSS (dB)
+25C +85C -40C
-4 -6 -8 -10 -12 -14 -16 -18 -20 16 17 18 19 20 21
+25C +85C -40C
22
23
24
25
26
27
FREQUENCY (GHz)
P1dB vs. Temperature
30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz)
+25C +85C -40C
Psat vs. Temperature
30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz)
+25C +85C -40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
5
AMPLIFIERS - SMT
Power Compression @ 18 GHz
26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 23 GHz
26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
Pout Gain PAE
-8
-6
-4
-2
0
2
4
6
8
10
12
14
-8
-6
-4
-2
0
2
4
6
8
10
12
14
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34 32 30 28 Psat (dBm) 26 24 22 20 18 16 14 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz)
+25C +85C -40C
Noise Figure vs. Temperature
12 10 NOISE FIGURE (dB) 8 6 4 2 0 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz)
+25C +85C -40C
Gain, Power and OIP3 vs. Supply Voltage @ 23 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4.5
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60
+25C +85C -40C
GAIN P1dB Psat OIP3
5 Vdd Supply Voltage (Vdc)
5.5
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc, Idd = 85 mA) Channel Temperature Continuous Pdiss (T = 85 C) (derate 5.46 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc -8.0 to 0 Vdc +16 dBm 175 C
Typical Supply Current vs. Vdd
Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 82 84 86
5
AMPLIFIERS - SMT
5 - 227
Note: Amplifier will operate over full voltage range shown above 0.491 W 183 C/W -65 to +150 C -40 to +85 C Class 1A
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1, 3, 7, 9 Function GND Description Package bottom must also be connected to RF/DC ground Interface Schematic
2
RFIN
This pin is AC coupled and matched to 50 Ohms from 17.5 - 25.5 GHz This pin may be connected to RF/DC ground. Performance will not be affected.
4, 6, 10, 12
N/C
5
Vgg
Gate control for amplifier. Adjust to achieve Id of 84 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note.
8
RFOUT
This pin is AC coupled and matched to 50 Ohms from 17.5 - 25.5 GHz
11
Vdd
Power Supply Votage for the amplifier. External bypass capacitors are required.
Application Circuit
Component C1, C2 C3, C4 C5, C6 Value 100 pF 1,000 pF 2.2 F
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC442LC3B
v00.1104
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 109712
Item J1 - J2 J3 - J6 C1 - C2 C3 - C4 C5 - C6 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum HMC442LC3B Amplifier 109710 Evaluation PCB
[1]
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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